DMG3414U new product n-channel enhancement mode mosfet features ? low on-resistance ? 25m ? @ v gs = 4.5v ? 29m ? @ v gs = 2.5v ? 37m ? @ v gs = 1.8v ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (note 3) steady state t a = 25c t a = 70c i d 4.2 3.2 a pulsed drain current (note 4) i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 3) p d 0.78 w thermal resistance, junction to ambient @t a = 25c r ja 162 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. no purposefully added lead. 2. device mounted on fr-4 pcb with 2oz. copper and test pulse width t 10s. 3. repetitive rating, pulse width limited by junction temperature. top view internal schematic top view d g s source gate drain product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
DMG3414U new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25 c i dss ? ? 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 8v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.5 ? 0.9 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 19 25 m ? v gs = 4.5v, i d = 8.2a 22 29 v gs = 2.5v, i d = 3.3a 28 37 v gs = 1.8v, i d = 2.0a forward transfer admittance |y fs | ? 7 ? s v ds = 10v, i d = 4a dynamic characteristics input capacitance c iss ? 829.9 ? pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 85.3 ? pf reverse transfer capacitance c rss ? 81.2 ? pf total gate charge q g ? 9.6 ? nc v gs = 4.5v, v ds = 10v, i d = 8.2a gate-source charge q g s ? 1.5 ? nc gate-drain charge q g d ? 3.5 ? nc turn-on delay time t d ( on ) ? 8.1 ? ns v dd = 10v, v gs = 4.5v, r l = 10 , r g = 6 , i d = 1a turn-on rise time t r ? 8.3 ? ns turn-off delay time t d ( off ) ? 40.1 ? ns turn-off fall time t f ? 9.6 ? ns notes: 4. short duration pulse test used to minimize self-heating effect. product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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